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AS5311
Datasheet - E l e c t r i c a l C h a r a c t e r i s t i c s
6.2.4
Tristate CMOS Output: DO
Table 7. Tristate CMOS Output
Symbol
Parameter
Conditions
Min
Typ
Max
Units
V OH
V OL
High level output voltage
Low level output voltage
VDD5V -0.5
VSS+0.4
V
V
I O
Output current
VDD5V: 4.5V
VDD5V: 3V
4
2
mA
6.3 Magnetic Input Specification
Two-pole cylindrical diametrically magnetized source:
Table 8. Magnetic Input Specification
Symbol
L p
t mag
B pk
B off
B tc
Parameter
Pole length
Pole pair length
Magnetic input field amplitude
Magnetic offset
Magnetic field temperature drift
Note
Recommended magnet: plastic or rubber
bonded ferrite or NdFeB
Required vertical component of the
magnetic field strength on the die’s surface
Constant magnetic stray field
Recommended magnet: plastic or rubber
bonded ferrite or NdFeB
Min
10
Typ
1
2
Max
40
±5
0.2
Units
mm
mm
mT
mT
%/K
Magnetic input field variation
Including offset gradient
±2
%
including interpolation
V abs
Disp
Z Dist
Linear travelling speed
Displacement
Vertical gap
Recommended magnet material and
temperature drift
Incremental output: 1024 steps / polepair
1
Maximum shift between defined Hall sensor
center and magnet centerline; depends on
magnet geometries
Package to magnet surface;
depends on magnet strength
Plastic or rubber bonded Ferrite
Plastic or rubber bonded Neodymium
(NdFeB)
0.5
0.3
-0.19
-0.12
650
mm/
sec
mm
mm
%/K
sampling – dist = ----
1. 1) For absolute outputs, a practical speed limit is 2345 mm/s. At higher speeds, input signal cancellation will occur and the detected field
decreases due to the internal front-end. Significant signal change is indicated by the status bits.
2) With increasing speed, the distance between two samples increases. The travelling distance between two subsequent samples can
be calculated as:
v
fs
where:
sampling_distance = travelling distance between samples (in mm)
v = travelling speed (in mm/sec)
fs = sampling rate in Hz (see Table 9)
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